Growth of Metastable β-AlN by Pulsed Laser Deposition

被引：9

作者：

Yoshitake, Tsuyoshi ^{[1
]}

Mohri, Satoshi ^{[1
]}

Hara, Takeshi ^{[2
]}

Nagayama, Kunihito ^{[3
]}

机构：

[1] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan

[2] Ariake Natl Coll Technol, Elect & Informat Engn Dept, Fukuoka 8368585, Japan

[3] Kyushu Univ, Dept Aeronaut & Astronaut, Fukuoka 8190395, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 05期

关键词：

cubic AlN; beta-AlN; thin film; laser ablation;

D O I：

10.1143/JJAP.47.3600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum nitride (AlN) thin films were prepared on sapphire (0001) in ambient nitrogen by pulsed laser deposition using a sintered AlN target, and the film structure was evaluated by X-ray diffraction and scanning electron microscopy. The central area of the film was partially studded with cubic AlN (beta-AlN) crystallites with obvious facets. This area was located on the normal of the irradiation spot on the target, and it corresponded to the region on the film where the highly energetic and dense species were deposited. A nonequilibrium condition and large supply of nitrogen are both important factors for the growth of metastable beta-AlN. [DOI: 10.1143/JJAP.47.3600]

引用

页码：3600 / 3602

页数：3

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