Study of structural, electronic, and mechanical properties of pure and hydrogenated multilayer penta-graphene nano-plates using density functional theory

被引:4
|
作者
Tahani, M. [1 ]
Shohany, B. G. [2 ]
Motevalizadeh, L. [3 ]
机构
[1] Ferdowsi Univ Mashhad, Dept Mech Engn, Mashhad, Razavi Khorasan, Iran
[2] Ferdowsi Univ Mashhad, Dept Phys, Fac Sci, Mashhad, Razavi Khorasan, Iran
[3] Islamic Azad Univ, Mashhad Branch, Dept Phys, Mashhad, Razavi Khorasan, Iran
来源
关键词
Multilayer penta-graphene; Hydrogen atom; Density function theory; Mechanical properties; Structural deformation; BAND-GAP; SIZE; DFT; COMPOUND; ORDER; C-60;
D O I
10.1016/j.mtcomm.2021.102608
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Penta-graphene, a new carbon allotrope, has been proposed recently with excellent electronic properties and great potential for meta-materials or auxetic materials. However, the mechanical behaviors of pure and hydrogenated multi-layer penta-graphene have not been fully explored yet. In this work, the ab initio study is performed to evaluate the electronic and mechanical properties of multilayer penta-graphene in the presence and absence of hydrogen atoms. The effect of increasing the number of layers on the electronic, deformation mechanism and mechanical properties of penta-graphene is studied using Siesta package. The present simulations show that pure penta-graphene is a semiconductor with a quasi-direct band gap. As the number of layers increases, the band gap value has a decreasing trend and by adding the hydrogen atoms, an insulator-semiconductor phase transition occurs. Our findings reveal that pure monolayer and multilayer pentagraphene are converted to biphenylene structure, by increasing the uniaxial strain. However, penta-graphene in the presence of hydrogen atoms does not undergo structural transformation under strain. These results are expected to be useful for the practical applications of penta-graphene in nano-electronic devices.
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页数:12
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