High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

被引：32

作者：

Tang, Shih-Hsuan ^{[1
]}

Chang, Edward Yi ^{[1
,2
]}

Hudait, Mantu ^{[3
]}

Maa, Jer-Shen ^{[1
]}

Liu, Chee-Wee ^{[4
]}

Luo, Guang-Li ^{[5
]}

Trinh, Hai-Dang ^{[1
]}

Su, Yung-Hsuan ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Virginia Tech, Dept Elect & Comp Engn, Blacksburg, VA 24061 USA

[4] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[5] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 16期

关键词：

HETEROSTRUCTURES; GERMANIUM;

D O I：

10.1063/1.3580605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality epitaxial Ge films were grown on GaAs substrates by ultrahigh vacuum chemical vapor deposition. High crystallinity and smooth surface were observed for these films by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Direct band gap emission (1550 nm) from this structure was detected by photoluminescence. Valence band offset of 0.16 eV at the Ge/GaAs interface was measured by x-ray photoelectron spectroscopy. N-type arsenic self-doping of 10(18)/cm(-3) in the grown Ge layers was determined using electrochemical capacitance voltage measurement. This structure can be used to fabricate p-channel metal-oxide-semiconductor field-effect transistor for the integration of Ge p-channel device with GaAs n-channel electronic device. (C) 2011 American Institute of Physics. [doi:10.1063/1.3580605]

引用

页数：3

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