Photovoltaic-Ferroelectric Materials for the Realization of All-Optical Devices

被引:8
|
作者
Makhort, Anatolii [1 ]
Gumeniuk, Roman [2 ]
Dayen, Jean-Francois [1 ]
Dunne, Peter [1 ]
Burkhardt, Ulrich [3 ]
Viret, Michel [4 ]
Doudin, Bernard [1 ]
Kundys, Bohdan [1 ]
机构
[1] Univ Strasbourg, CNRS, Inst Phys & Chim Mat Strasbourg, UMR 7504, 23 Rue Loess, F-67000 Strasbourg, France
[2] TU Bergakad Freiberg, Inst Expt Phys, Leipziger Str 23, D-09596 Freiberg, Germany
[3] Max Planck Inst Chem Phys Fester Stoffe, Nothnitzer Str 40, D-01187 Dresden, Germany
[4] Univ Paris Saclay, CNRS, CEA, SPEC, F-91191 Gif Sur Yvette, France
关键词
ferroelectrics; light transmission; optical materials; optical memory; optical transistor; SINGLE; CAVITY; BANDGAP; FIELD;
D O I
10.1002/adom.202102353
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Following how the electrical transistor revolutionized the field of electronics, the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as an optical transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all-optical logic circuits.
引用
收藏
页数:7
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