MODELING STUDY OF IMPACT OF SURFACE ROUGHNESS ON FLICKER NOISE IN MOSFET

被引：0
|
作者：
Galphade, Prafulla [1 ]
Dhavse, Rasika [1 ]
机构：
[1] Sardar Vallabhbhai Natl Inst Technol, Dept Elect Engn, Surat, India
来源：
2011 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI) | 2011年
关键词：
D O I：
10.1109/ISVLSI.2011.63
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The existing flicker noise models are either designed with assumption of smooth silicon surface or the impact of variation of roughness has not been taken into account by these models. In the proposed model, it has been considered that the factors, Oxide Thickness, Oxide Capacitance and Threshold Voltage, are affected by Surface Roughness. The fundamental philosophy for the development is same as Unified Model for Flicker Noise.
引用
收藏
页码：333 / 334
页数：2
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