An analytical two-dimensional model for AlGaN/GaN HEMT with polarization effects for high power applications

被引：15
|
作者：
Tyagi, Rajesh K.
Ahlawat, Anil
Pandey, Manoj
Pandey, Sujata [1 ]
机构：
[1] Amity Sch Engn & Technol, Dept Elect & Commun Engn, New Delhi 110061, India
[2] Inst Technol & Management, Gurgaon, India
来源：
MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 8-9期
关键词：
AlGaN/GaN HEMTs; polarization; two-dimensional model; transconductance; cut off frequency;
D O I：
10.1016/j.mejo.2007.07.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical two-dimensional model for AlGaN/GaN modulation-doped field effect transistor is developed. The spontaneous and piezoelectric polarization effects have been included. Two-dimensional analysis has been carried out in the high field region. The output characteristics, device transconductance and cut off frequency for 120 nm gate length device are obtained. Peak transconductance of 320 mS/mm and a cut off frequency of 120 GHz has been obtained. The results show excellent agreement when compared with experimental data thereby proving the validity of the model. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：877 / 883
页数：7
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