Complex Impedance of Fast Optical Transition Edge Sensors up to 30MHz

被引:8
|
作者
Hattori, K. [1 ]
Kobayashi, R. [2 ]
Numata, T. [1 ]
Inoue, S. [2 ]
Fukuda, D. [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058563, Japan
[2] Nihon Univ, Inst Quantum Sci, Chiyoda Ku, Tokyo 1018303, Japan
关键词
Transition edge sensor; Complex impedance; Thermal model;
D O I
10.1007/s10909-018-1883-6
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optical transition edge sensors (TESs) are characterized by a very fast response, of the order of times faster than TESs for X-ray and gamma-ray. To extract important parameters associated with the optical TES, complex impedances at high frequencies (>1MHz) need to be measured, where the parasitic impedance in the circuit and reflections of electrical signals due to discontinuities in the characteristic impedance of the readout circuits become significant. This prevents the measurements of the current sensitivity , which can be extracted from the complex impedance. In usual setups, it is hard to build a circuit model taking into account the parasitic impedances and reflections. In this study, we present an alternative method to estimate a transfer function without investigating the details of the entire circuit. Based on this method, the complex impedance up to 30MHz was measured. The parameters were extracted from the impedance and were compared with other measurements. Using these parameters, we calculated the theoretical limit on an energy resolution and compared it with the measured energy resolution. In this paper, the reasons for the deviation of the measured value from theoretically predicted values will be discussed.
引用
收藏
页码:217 / 224
页数:8
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