Quasi-one-dimensional transport in the extreme quantum limit of heavily doped n-InSb

被引：4

作者：

Murzin, SS ^{[1
]}

Jansen, AGM

Haanappel, EG

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

[2] Max Planck Inst Festkorperforsch, Grenoble High Magnet Field Lab, F-38042 Grenoble 9, France

[3] CNRS, F-38042 Grenoble 9, France

[4] Phys Mat Condensee Lab, F-31432 Toulouse 4, France

[5] Lab Natl Champs Magnet Pulses, F-31432 Toulouse 4, France

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.62.16645

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The longitudinal (rho (zz)) and transverse (rho (xx)) resistivities of heavily doped n-InSb have been studied systematically in the extreme quantum limit of applied magnetic field. The results are discussed in terms of the quasi-one-dimensional nature of the transport in the extreme quantum limit for the case of electron scattering by ionized impurities. The relation between transverse and longitudinal resistivity predicted for this case is verified experimentally both in magnetic-field and temperature-dependent data.

引用

页码：16645 / 16652

页数：8

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