Growth of high quality AlN single crystals and their optical properties

被引：0

作者：

Strassburg, M ^{[1
]}

Senawiratne, J ^{[1
]}

Dietz, N ^{[1
]}

Haboeck, U ^{[1
]}

Hoffmann, A ^{[1
]}

Noveski, V ^{[1
]}

Dalmau, R ^{[1
]}

Schlesser, R ^{[1
]}

Sitar, Z ^{[1
]}

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Growth and optical properties of high quality AlN single crystals grown by physical vapor transport using powder sublimation is presented. Crystallinity, incorporated impurities and their effects on the optical properties are evaluated for different crucible materials and growth environments. A significant reduction of impurity incorporation was achieved using a two-step growth process in a TaN crucible. Crystal defects and the effect of incorporated impurities on the optical properties have been analyzed by their characteristic photoluminescence and absorption, Raman- and glow discharge mass spectroscopy.

引用

页码：211 / 212

页数：2

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