New TTF and bis-TTF containing thiophene units: Electrical properties of the resulting salts

被引：7
|
作者：
Abbaz, Tahar
Gouasmia, Abdel-K.
Fujiwara, Hideki
Hiraoka, Takashi
Sugimoto, Toyonari
Taillefer, Marc
Fabre, Jean-M.
机构：
[1] ENSCM, AM2N,CNRS, UMR 5253, Inst Charles Gerhardt, F-34296 Montpellier 5, France
[2] Ctr Univ Tebessa, Lab Chim Mat Organ, Tebessa, Algeria
[3] Osaka Prefecture Univ, Grad Sch Sci, Dept Chem, Sakai, Osaka 5998570, Japan
来源：
SYNTHETIC METALS | 2007年 / 157卷 / 13-15期
关键词：
tetrathiafulvalene; thiophene; radical cation; conductivity; electrochemistry;
D O I：
10.1016/j.synthmet.2007.05.004
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Series of new TTF and bis-TTF containing a thiophene ring as a substituent or as a spacer group were prepared by using a pall adium-catalyzed cross-coupling reaction from tributylstannyl-trimethyltetrathiafulvalene (tMeTTF-SnBu3) and different halogeno and dihalogenothiophene derivatives. The reducing power of each new precursor was determined by cyclic voltammetry. Radical cations salts and charge transfer complexes of the donors with TCNQ were prepared and characterized. The electrical conductivity of these materials was measured and discussed in terms of (electronic) structure. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：508 / 516
页数：9
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