Gas Sensing with AlGaN/GaN 2DEG Channels

被引:6
|
作者
Offermans, Peter [1 ]
Vitushinsky, Roman [1 ]
Crego-Calama, Mercedes [1 ]
Brongersma, Sywert H. [1 ]
机构
[1] IMEC Holst Ctr, NL-5656 AE Eindhoven, Netherlands
来源
EUROSENSORS XXV | 2011年 / 25卷
关键词
2DEG; NOx; sensing; metalloporphyrins;
D O I
10.1016/j.proeng.2011.12.350
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
AlGaN/GaN shows great promise as a generic platform for (bio-) chemical sensing because of its robustness and intrinsic sensitivity to surface charge or dipoles. Here, we employ the two-dimensional electron gas (2DEG) formed at the interface of AlGaN/GaN layers grown on Si substrates for the ultra-sensitive detection of NOx. In the presence of humidity, the interaction of NOx with the naturally adsorbed water layer at the surface changes the surface polarity, thereby instantaneously affecting the 2DEG conductivity. We show that this concept can be used for ultra-low-power continuous air quality monitoring, at room temperature and humidity levels down to 10%. The extremely low current noise level in our structures enables the reproducible detection of variations in the NOx concentration of 1 ppb. Furthermore, we show that these devices can be functionalized with metalloporphyrins resulting in sensitivity to NO and NO2 concentrations below 50 ppb even in dry conditions. (C) 2011 Published by Elsevier Ltd.
引用
收藏
页数:4
相关论文
共 50 条
  • [41] Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure
    Wong, King-Yuen
    Tang, Wilson
    Lau, Kei May
    Chen, Kevin J.
    2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, : 2034 - 2037
  • [42] Modeling of 2DEG and 2DHG in i-GaN Capped AlGaN/AlN/GaN HEMTs
    Faramehr, S.
    Kalna, K.
    Igic, P.
    2014 29TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS PROCEEDINGS - MIEL 2014, 2014, : 81 - 84
  • [43] AlGaN/AlN/GaN HEMT结构2DEG的光致发光谱
    唐健
    王晓亮
    肖红领
    半导体技术, 2014, 39 (09) : 703 - 706
  • [44] Optical detection of 2DEG in GaN/AlGaN structures - High magnetic field studies
    Chwalisz, B
    Wysmolek, A
    Stepniewski, R
    Potemski, M
    Knap, W
    Baranowski, JM
    Grandjean, N
    Massies, J
    Prystawko, P
    Grzegory, I
    E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS, 2004, 1 (02): : 193 - 197
  • [45] 2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE
    Bougrioua, Z
    Farvacque, JL
    Moerman, I
    Carosella, F
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 228 (02): : 625 - 628
  • [46] Temperature dependence of 2DEG and excitonic optical transitions in AlGaN/GaN heterostructures on SiC
    Litton, CW
    Reynolds, DC
    Hoelscher, JE
    Collins, TC
    Fitch, R
    Via, GD
    Gillespie, J
    Crespo, A
    Jenkins, TJ
    Worley, R
    Saxler, A
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2736 - 2739
  • [47] Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
    Ahmed, Nadim
    Dutta, Aloke K.
    SOLID-STATE ELECTRONICS, 2017, 132 : 64 - 72
  • [48] AlGaN/GaN HEMT 2DEG电致耦合模型的研究
    兰立广
    张志国
    杨瑞霞
    冯志宏
    蔡树军
    杨克武
    半导体技术, 2009, 34 (12) : 1185 - 1188+1204
  • [49] Simplified 2DEG Carrier Concentration Model For Composite Barrier AlGaN/GaN HEMT
    Das, Palash
    Biswas, Dhrubes
    SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B, 2014, 1591 : 1449 - 1451
  • [50] Analytically Modeling the Effect of Buffer Charge on the 2DEG Density in AlGaN/GaN HEMT
    Wang, Fangzhou
    Chen, Wanjun
    Wang, Yang
    Sun, Ruize
    Ding, Guojian
    Yu, Ping
    Wang, Xiaohui
    Feng, Qi
    Xu, Wenjun
    Xu, Xiaorui
    Liu, Chao
    Wang, Zeheng
    Jia, Haiqiang
    Chen, Hong
    Zhang, Bo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (03) : 1654 - 1661