Correlating Electronic Transport to Atomic Structures in Self-Assembled Quantum Wires

被引:27
|
作者
Qin, Shengyong [1 ]
Kim, Tae-Hwan [1 ]
Zhang, Yanning [2 ]
Ouyang, Wenjie [2 ]
Weitering, Hanno H. [3 ]
Shih, Chih-Kang [4 ]
Baddorf, Arthur P. [1 ]
Wu, Ruqian [2 ]
Li, An-Ping [1 ]
机构
[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[2] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA
[3] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
[4] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA
基金
美国国家科学基金会;
关键词
Electronic transport; nanowire; defects; electronic coupling; localization; electronic density of states; scanning tunneling microscopy; NANOWIRES; SILICIDES; SURFACES; SILICON;
D O I
10.1021/nl204003s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Quantum wires, as a smallest electronic conductor, are expected to be a fundamental component in all quantum architectures. The electronic conductance in quantum wires, however, is often dictated by structural instabilities and electron localization at the atomic scale. Here we report on the evolutions of electronic transport as a function of temperature and interwire coupling as the quantum wires of GdSi2 are self-assembled on Si(100) wire-by-wire. The correlation between structure, electronic properties, and electronic transport are examined by combining nanotransport measurements, scanning tunneling microscopy, and density functional theory calculations. A metal-insulator transition is revealed in isolated nanowires, while a robust metallic state is obtained in wire bundles at low temperature. The atomic defects lead to electron localizations in isolated nanowire, and interwire coupling stabilizes the structure and promotes the metallic states in wire bundles. This illustrates how the conductance nature of a one-dimensional system can be dramatically modified by the environmental change on the atomic scale.
引用
收藏
页码:938 / 942
页数:5
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