High-temperature single-electron transistor based on a gold nanoparticle

被引：1

作者：

Dagesyan, S. A. ^{[1
]}

Stepanov, A. S. ^{[2
]}

Soldatov, E. S. ^{[1
]}

Zharik, G. ^{[1
]}

机构：

[1] Lomonosov Moscow State Univ, Fac Phys, Moscow, Russia

[2] Scobeltsyn Inst Nucl Phys, Moscow, Russia

来源：

INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2014 | 2014年 / 9440卷

关键词：

single-electronics; molecular electronics; electromigration; gold nanoparticle; correlated tunneling;

D O I：

10.1117/12.2181137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molecular single-electron transistors based on small (2 - 4 nm) gold nanoparticles were fabricated using an electron-beam lithography and the electromigration method. Electrical characteristics of the obtained transistors were measured at 77 and 300 K. The characteristics show that the regime of a correlated tunneling of electrons was realized at these high for the process temperatures.

引用

页数：6

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