Magnetic-field effects on excitons trapped in quantum dots/interface defects in narrow quantum wells

被引：23
|
作者：
Barticevic, Z
Pacheco, M
Duque, CA
Oliveira, LE
机构：
[1] Univ Tecn Federico Santa Maria, Dept Fis, Valparaiso, Chile
[2] Univ Santiago Chile, Dept Fis, Santiago, Chile
[3] Univ Antioquia, Inst Fis, Medellin, Colombia
[4] Univ Estadual Campinas, Inst Fis, Campinas, SP, Brazil
来源：
PHYSICAL REVIEW B | 2003年 / 68卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.68.073312
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A theoretical study, within the effective-mass approximation, of the effects of applied magnetic fields on excitons trapped in quantum dots/interface defects is presented. Actual traps are formed by fluctuations either in composition or structure size in narrow GaAs/Ga1-xAlxAs quantum wells. Exciton trapping is taken into account through a model quantum dot formed by monolayer fluctuations in the z direction, and lateral confinement, via a parabolic potential, in the exciton-in plane coordinate. Magnetic fields are applied in the growth direction of the semiconductor heterostructure, and the various magnetoexciton states are obtained in the effective-mass approximation by an expansion of the exciton-envelope wave functions in terms of products of hole and electron quantum-well states with appropriate Gaussian functions for the various excitonic states. Theoretical results are found in overall agreement with available experimental measurements.
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页数：4
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