Ultrahigh-temperature oxidation of 4H-SiC (0001) and gate oxide reliability dependence on oxidation temperature

被引：8

作者：

Wan, Caiping ^{[1
,2
]}

Xu, Hengyu ^{[2
,3
]}

Xia, Jinghua ^{[1
]}

Ao, Jin-Ping ^{[3
]}

机构：

[1] Global Energy Interconnect Res Inst Co Ltd, State Key Lab Adv Power Transmiss Technol, 18 Riverside Ave Future Sci & Technol City, Beijing 102209, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, 3 Beitucheng West Rd, Beijing 100029, Peoples R China

[3] Tokushima Univ, Grad Sch Adv Technol & Sci, Tokushima 7708506, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2020年 / 530卷 / 530期

关键词：

Silicon carbide; Oxides; Interface state density; 4H-SiC MOS capacitors; Defects; Ultrahigh-temperature oxidation;

D O I：

10.1016/j.jcrysgro.2019.125250

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The paper confirmed the SiC/SiO2 interface state density obtained from the ultrahigh-temperature dry oxidation process on 4H-SiC Si-face (0 0 0 1) at up to 1550 degrees C without any other passivating techniques. Our results were consistent with those of previous reports. Furthermore, we also considered the reliability of SiO2, which is important for its practical application, by TDDB measurements. The optimal interface state density was obtained for the gate oxide formed at 1450 degrees C at E-C - E = 0.2-0.6 eV, whereas the gate oxide was relatively the most reliable for the oxidation at 1250 degrees C. It suggests that the effects of oxidation temperature of 4H-SiC (0 0 0 1) had a trade-off between gate oxide reliability and SiC/SiO2 interface properties.

引用

页数：4

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