Ultrahigh-temperature oxidation of 4H-SiC (0001) and gate oxide reliability dependence on oxidation temperature

The paper confirmed the SiC/SiO2 interface state density obtained from the ultrahigh-temperature dry oxidation process on 4H-SiC Si-face (0 0 0 1) at up to 1550 degrees C without any other passivating techniques. Our results were consistent with those of previous reports. Furthermore, we also considered the reliability of SiO2, which is important for its practical application, by TDDB measurements. The optimal interface state density was obtained for the gate oxide formed at 1450 degrees C at E-C - E = 0.2-0.6 eV, whereas the gate oxide was relatively the most reliable for the oxidation at 1250 degrees C. It suggests that the effects of oxidation temperature of 4H-SiC (0 0 0 1) had a trade-off between gate oxide reliability and SiC/SiO2 interface properties.