Esbt® power switch in high efficiency DC-DC converter

被引:0
|
作者
Buonomo, S. [1 ]
Crisafulli, V. [2 ]
Enea, V. [1 ]
Nania, M. [1 ]
Raciti, A. [2 ]
Ronsisvalle, C. [1 ]
Scollo, R. [1 ]
机构
[1] STM Microelect Stredale Primosole, I-5095121 Catania, Italy
[2] Catania Univ, Dept Elect Elect & Syst Engn, Catania, Italy
关键词
D O I
10.1109/IECON.2007.4459983
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Well established in low-voltage low- medium- power applications for their high efficiency, DC-DC converters are also widely used in high-voltage high-power Telecom and Industrial applications which are always demanding for higher and higher efficiency. 1200V State-of-the-Art IGBTs are the best choice in the field of high Current and Three-phase DC-DC converter working at a switching frequency up to about 20 KHZ, while 1200V MOSFETs are definitely the only solution for higher frequency. The trade-off between Conduction Voltage Drop/Losses and switching speed/losses and costs as well helps to make the choice. Recently availbale in the market, ESBT (Emitter Switched Bipolar Transistor) having high breakdown voltage, low conduction drop and high frequecncy switching capability, represents the only solution to increase the efficiency and/or reduce the equipment size showing a competitive cost at the same time. A very effective and easy ESBT driving method (ST patent pending) has been fully investigated and tested in a 1.5kW double switch forward converter. Finally the potentiality of the new device together with the proposed driving solution has been explored in a 12kW converter.
引用
收藏
页码:1374 / +
页数:2
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