Influence of aging temperature and time on the intermetallic reaction in 15μm Cu/Sn copper pillar bump

被引：0
|
作者：
Ye, Lei [1 ]
Huang, Chao [1 ]
Ling, Huiqin [1 ]
Hu, Anmin [1 ]
Li, Ming [1 ]
机构：
[1] Shanghai Jiao Tong Univ, State Key Lab Met Matrix Composites, Key Lab Thin Film & Microfabricat Technol, Minist Educ,Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
来源：
2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2018年
关键词：
intermetallic compounds; intermetallic reaction; aging temperature; aging time; aging morphology; SN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Micro Cu/Sn copper pillar bumps, with excellent conductivity and thermal conductivity, show broad prospects in electronic packaging. It is of significance to study the impact of aging temperature and time on the intermetallic reaction in micro copper pillar bump. This pager concentrates on the influence of different aging temperature and time on the intermetallic reaction in 15 mu m micro copper pillar bumps. The bumps are prepared to be annealed for different time at different temperature. We find that the increase of aging time and temperature will significantly promote the morphology change and growth of IMCs, which are key to the reliability of micro Cu/Sn copper pillar bumps. The interface morphology changes from scallop-shaped to relatively flat after aging. The growth of Cu6Sn5 is determined by the production by Cu/Sn and the consumption of Cu3Sn.
引用
收藏
页码：462 / 465
页数：4
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