Influence of aging temperature and time on the intermetallic reaction in 15μm Cu/Sn copper pillar bump

被引:0
|
作者
Ye, Lei [1 ]
Huang, Chao [1 ]
Ling, Huiqin [1 ]
Hu, Anmin [1 ]
Li, Ming [1 ]
机构
[1] Shanghai Jiao Tong Univ, State Key Lab Met Matrix Composites, Key Lab Thin Film & Microfabricat Technol, Minist Educ,Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
关键词
intermetallic compounds; intermetallic reaction; aging temperature; aging time; aging morphology; SN;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Micro Cu/Sn copper pillar bumps, with excellent conductivity and thermal conductivity, show broad prospects in electronic packaging. It is of significance to study the impact of aging temperature and time on the intermetallic reaction in micro copper pillar bump. This pager concentrates on the influence of different aging temperature and time on the intermetallic reaction in 15 mu m micro copper pillar bumps. The bumps are prepared to be annealed for different time at different temperature. We find that the increase of aging time and temperature will significantly promote the morphology change and growth of IMCs, which are key to the reliability of micro Cu/Sn copper pillar bumps. The interface morphology changes from scallop-shaped to relatively flat after aging. The growth of Cu6Sn5 is determined by the production by Cu/Sn and the consumption of Cu3Sn.
引用
收藏
页码:462 / 465
页数:4
相关论文
共 50 条
  • [1] Influence of solder cap thickness on the interfacial reaction in Cu/Sn/Ni copper pillar bump
    Li, Ya
    Rao, Li
    Ling, Huiqin
    Hu, Anmin
    Li, Ming
    2017 18TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2017, : 639 - 643
  • [2] Research on the interfacial reaction and mechanism of Cu/Sn/Ni copper pillar bump
    Rao, Li
    Hu, Fengtian
    Xu, Penghui
    Hu, Anmin
    Gao, Liming
    Li, Ming
    Zhao, Wen
    2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2016, : 1045 - 1050
  • [3] Research on the reliability of Cu/Sn copper pillar bump
    Zhao, Wen
    Rao, Li
    Hu, Anmin
    Gao, Liming
    Li, Ming
    2017 18TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2017, : 946 - 949
  • [4] Scaling effect of interfacial reaction on intermetallic compound formation in Sn/Cu pillar down to 1 μm diameter
    Liu, Yingxia
    Chu, Ying-Ching
    Tu, K. N.
    ACTA MATERIALIA, 2016, 117 : 146 - 152
  • [5] Temperature Effect on Intermetallic Compound Growth Kinetics of Cu Pillar/Sn Bumps
    Lim, Gi-Tae
    Kim, Byoung-Joon
    Lee, Kiwook
    Kim, Jaedong
    Joo, Young-Chang
    Park, Young-Bae
    JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (11) : 2228 - 2233
  • [6] Investigation of the intermetallic compounds growth in 10μm Cu/Sn and Cu/Ni/Sn microbumps under isothermal temperature aging
    Yin, Yihao
    Ling, Huiqin
    Guo, Fayao
    Hu, Anmin
    Li, Ming
    2020 21ST INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2020,
  • [7] Temperature Effect on Intermetallic Compound Growth Kinetics of Cu Pillar/Sn Bumps
    Gi-Tae Lim
    Byoung-Joon Kim
    Kiwook Lee
    Jaedong Kim
    Young-Chang Joo
    Young-Bae Park
    Journal of Electronic Materials, 2009, 38 : 2228 - 2233
  • [8] Research on Reliability of Ni/Sn/Cu(Ni) Copper Pillar Bump Under Thermoelectric Loading
    Dai, Junjie
    Zhang, Yuexin
    Li, Zhankun
    Chen, Mingming
    Guo, Yuhua
    Fan, Zhekun
    Li, Junhui
    JOURNAL OF ELECTRONIC PACKAGING, 2022, 144 (03)
  • [9] Evolution of Cu/Al intermetallic compounds in the copper bump bonds during aging process
    Tian, Yanhong
    Hang, Chunjin
    Wang, Chunqing
    Zhou, Y.
    ICEPT: 2007 8TH INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING TECHNOLOGY, PROCEEDINGS, 2007, : 347 - +
  • [10] Investigation on solid state bonding and intermetallic compounds reaction of Cu pillar bump/Ni micro cones
    Guo, Yukun
    Hu, Anmin
    Li, Ming
    2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2018, : 419 - 422