Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors

被引：2
|
作者：
Wang, Bau-Ming [1 ]
Yang, Tzu-Ming [1 ]
Wu, YewChung Sermon [1 ]
Su, Chun-Jung [2 ]
Lin, Horng-Chih [2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2010年 / 124卷 / 01期
关键词：
Nickel-metal induced lateral crystallization (NILC); Nanowire (NW); Ni-gettering; Thin-film transistor (TFT); POLY-SI TFTS; LEAKAGE CURRENT; MEDIATED CRYSTALLIZATION; ELECTRICAL-PROPERTIES; AMORPHOUS-SILICON; LOW-TEMPERATURE; CHANNEL; MECHANISM; SUBSTRATE; OXIDE;
D O I：
10.1016/j.matchemphys.2010.08.018
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High performance nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) were fabricated. The phosphorous-doped amorphous silicon (alpha-Si)/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance and the uniformity of NILC poly-Si NW TFTs. It was found that the performance and the uniformity of NW TFTs were greatly improved after Ni-gettering process. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：880 / 883
页数：4
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