Kinetics of nickel-induced lateral crystallization of amorphous silicon thin-film transistors by rapid thermal and furnace anneals

被引：0
|
作者：
Dept. of Mat. Sci. and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853, United States [1 ]
机构：
来源：
Appl Phys Lett | / 13卷 / 1866-1868期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Kinetics of nickel-induced lateral crystallization of amorphous silicon thin-film transistors by rapid thermal and furnace anneals
    Lam, LK
    Chen, SK
    Ast, DG
    APPLIED PHYSICS LETTERS, 1999, 74 (13) : 1866 - 1868
  • [2] Nickel induced lateral crystallization of amorphous silicon thin film transistor by rapid thermal anneal
    Lam, LK
    Chen, SK
    Ast, DG
    PROCEEDINGS OF THE FOURTH SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES, 1999, 98 (22): : 76 - 83
  • [3] Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors
    Wang, Bau-Ming
    Yang, Tzu-Ming
    Wu, YewChung Sermon
    Su, Chun-Jung
    Lin, Horng-Chih
    MATERIALS CHEMISTRY AND PHYSICS, 2010, 124 (01) : 880 - 883
  • [4] Effect of compressive stress on nickel-induced lateral crystallization of amorphous silicon thin films
    Huang, S. Y.
    Lin, H. L.
    Chao, C. G.
    Liu, T. F.
    THIN SOLID FILMS, 2012, 520 (07) : 2984 - 2988
  • [5] Nickel-induced crystallization of amorphous silicon
    Schmidt, J. A.
    Budini, N.
    Rinaldi, P.
    Arce, R. D.
    Buitrago, R. H.
    XIX LATIN AMERICAN SYMPOSIUM ON SOLID STATE PHYSICS (SLAFES), 2009, 167
  • [6] Optimization of Si and GexSi1-x crystallization with furnace and rapid thermal anneals for thin film transistors
    Rem, JB
    deLeuw, MCV
    Holleman, J
    Verweij, JF
    PROCEEDINGS OF THE THIRD SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES, 1997, 96 (23): : 197 - 205
  • [7] In situ resistance measurement of nickel-induced lateral crystallization of amorphous silicon
    Li, Junfeng
    Zeng, Xiangbin
    Sun, Xiaowei
    Qi, Guojun
    Japanese Journal of Applied Physics, Part 2: Letters, 2003, 42 (8 A):
  • [8] In situ resistance measurement of nickel-induced lateral crystallization of amorphous silicon
    Li, JF
    Zeng, XB
    Sun, XW
    Qi, GJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (8A): : L898 - L900
  • [9] Directional nickel-induced fielded aided lateral crystallization of amorphous silicon
    Izmajlowicz, MAT
    Flewitt, AJ
    Milne, WI
    Morrison, NA
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (12) : 7535 - 7541
  • [10] Low thermal budget polycrystalline silicon thin-film transistors fabricated by metal-induced lateral crystallization
    Kim, TK
    Lee, BI
    Joo, SK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S193 - S195
12345