Annealing effect on structures and luminescence of amorphous SiN films

被引：9
|
作者：
Xu, Jun [1 ]
Rui, Yunjun
Chen, Deyuan
Mei, Jiaxin
Zhou, Liping
Cen, Zhanhong
Li, Wei
Chen, Kunji
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Jiangsu Prov Key Lab Photon & Elect Mat Sci & Tec, Nanjing 210093, Peoples R China
来源：
MATERIALS LETTERS | 2007年 / 61卷 / 28期
基金：
中国国家自然科学基金;
关键词：
optical materials and properties; luminescence; chemical vapor deposition;
D O I：
10.1016/j.matlet.2007.03.095
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The microstructures and chemical bonding configurations of amorphous silicon nitride films with various compositions are investigated. Room temperature photoluminescence is observed which depended on the film concentrations. The post-annealing treatment at moderate temperature region of 700-900 degrees C is performed and the annealing effect on the structures and luminescence is studied. It is found that the structural rearrangements occurred after thermal annealing due to the effusion of hydrogen from the films. The luminescence is also changed after annealing and the possible originations are briefly discussed. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：5010 / 5013
页数：4
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