Hollow core dislocations in Mg-doped AlGaN

被引：0

作者：

Cherns, D ^{[1
]}

Wang, YQ ^{[1
]}

Liu, R ^{[1
]}

Ponce, FA ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

来源：

GAN AND RELATED ALLOYS-2002 | 2003年 / 743卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (10(20) cm(-3)) Al0.03Ga0.97N films grown on (000 1) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1-5nm. The mechanism of hollow core formation and the role of Mg are discussed.

引用

页码：609 / 614

页数：6

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