Hydrogen flip model for light-induced changes of amorphous silicon

被引：67
|
作者：
Biswas, R [1 ]
Li, YP
机构：
[1] Iowa State Univ, Microelect Res Ctr, Dept Phys & Astron, Ames, IA 50011 USA
[2] Iowa State Univ, US DOE, Ames Lab, Ames, IA 50011 USA
[3] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
来源：
PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 12期
关键词：
D O I：
10.1103/PhysRevLett.82.2512
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We propose a new metastable defect associated with hydrogen atoms in amorphous silicon. A higher energy metastable state is formed when H is flipped to the backside of the Si-H bond at monohydride sites. The defect is described by a double-well potential energy. The dipole moment of this "H-flip" defect is larger and increases the infrared absorption. This defect accounts for large structural changes observed on light soaking including larger infrared absorption and volume dilation.
引用
收藏
页码：2512 / 2515
页数：4
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