Ultra-low spike rate silicon neuron

被引:3
|
作者
Wong, Yanyi L. [1 ]
Xu, Peng [1 ]
Abshire, Pamela [1 ]
机构
[1] Univ Maryland, Syst Res Inst, College Pk, MD 20742 USA
关键词
D O I
10.1109/BIOCAS.2007.4463317
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
We present theory, design and simulation results for a silicon neuron circuit that achieves extremely low spike rates and small footprint by exploiting the low current characteristics in floating gate structures. As in biological counterparts, the spike rate is compressed against stimulant current. Simulations confirm sub-Hertz spike rates in steady state with a stimulant current of 7pA and below, and up to 100x spike rate reduction at 1nA. With reasonable device variation modelling, Monte Carlo simulation shows that spike rate varies by a standard deviation of 25%.
引用
收藏
页码:95 / 98
页数:4
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