Silicon carbide photodiode sensor for combustion control

被引:20
|
作者
Brown, DM [1 ]
Fedison, JB
Hibshman, JR
Kretchmer, JW
Lombardo, L
Matocha, KS
Sandvik, PM
机构
[1] Gen Elect Global Res Ctr, Moscow 123098, Russia
[2] Gen Elect Reuter Stokes, Twinsburg, OH 44087 USA
关键词
combustion; flame; photodiode; silicon carbide (SiC); temperature; ultraviolet;
D O I
10.1109/JSEN.2005.854143
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A dual silicon carbide photodiode chip was developed to determine the temperature of a natural gas combustion flame. The concept uses the change in shape of the 260-350 nm OH band with temperature. One half of the chip was covered with a long-pass multiple layer dielectric filter with a short wavelength cutoff at about 315 nm. After amplification, the two signals produced by the filtered and unfiltered halves of the chip are divided to produce a ratio, which is very sensitive to changes in flame temperature. Sensitivity is about 0.35% per 20 degrees F change in flame temperature for temperatures between 2700 and 3000 degrees F. The temperature measured is the specific average temperature encompassed by the field of view of the sensor assembly.
引用
收藏
页码:983 / 988
页数:6
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