Effect of vacuum heat treatment on the metal-semiconductor phase transition in thin vanadium dioxide films

被引：19
|
作者：
Aliev, RA
Andreev, VN
Klimov, VA
Lebedev, VM
Nikitin, SE
Terukov, EI
Shadrin, EB
机构：
[1] Russian Acad Sci, Dagestan Res Ctr, Amirkhanov Inst Phys, Makhachkala 367003, Dagestan, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] Russian Acad Sci, BP Konstantinov Nucl Phys Inst, Gatchina 188300, Leningrad Oblas, Russia
来源：
TECHNICAL PHYSICS | 2005年 / 50卷 / 06期
关键词：
Dioxide; Phase Transition; Heat Treatment; Vanadium; Hysteresis Loop;
D O I：
10.1134/1.1947353
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of vacuum heat treatment of thin vanadium dioxide films on the parameters of the metal semiconductor phase transition is studied. The results of heat treatment are compared with those obtained upon irradiation of the synthesized films by medium-energy electrons. The elemental composition of the films that is found by the Rutherford backscattering (RBS) method suggests that an observed change in the hysteresis loop of the films is associated with the reduction of the vanadium dioxide upon heating in a vacuum. (c) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：754 / 757
页数：4
相关论文
共 50 条
  • [11] Effect of grain sizes on the metal-semiconductor phase transition in vanadium dioxide polycrystalline thin films
    Aliev, R. A.
    Andreev, V. N.
    Kapralova, V. M.
    Klimov, V. A.
    Sobolev, A. I.
    Shadrin, E. B.
    PHYSICS OF THE SOLID STATE, 2006, 48 (05) : 929 - 934
  • [12] Effect of the metal-semiconductor phase transition on the rate of hydrogen penetration into vanadium dioxide thin films
    V. N. Andreev
    V. A. Klimov
    Physics of the Solid State, 2010, 52 : 605 - 611
  • [13] Effect of grain sizes on the metal-semiconductor phase transition in vanadium dioxide polycrystalline thin films
    R. A. Aliev
    V. N. Andreev
    V. M. Kapralova
    V. A. Klimov
    A. I. Sobolev
    E. B. Shadrin
    Physics of the Solid State, 2006, 48 : 929 - 934
  • [14] EFFECT OF UNIAXIAL PRESSURE ON THE METAL-SEMICONDUCTOR PHASE TRANSITION IN VANADIUM DIOXIDE FILMS.
    Bilenko, D.I.
    Zharkova, E.A.
    Khasina, E.I.
    Borisov, S.P.
    Stal'makhov, A.V.
    Soviet Microelectronics (English Translation of Mikroelektronika), 1979, 8 (01): : 54 - 56
  • [15] Metal-semiconductor transition in nonstoichiometric vanadium dioxide films
    Berezina, O. Ya.
    Velichko, A. A.
    Lugovskaya, L. A.
    Pergaunent, A. L.
    Stefanovich, G. B.
    INORGANIC MATERIALS, 2007, 43 (05) : 505 - 511
  • [16] Metal-semiconductor transition in nonstoichiometric vanadium dioxide films
    O. Ya. Berezina
    A. A. Velichko
    L. A. Lugovskaya
    A. L. Pergament
    G. B. Stefanovich
    Inorganic Materials, 2007, 43 : 505 - 511
  • [17] On the nature of metal-semiconductor phase transition in vanadium dioxide
    Shadrin, EB
    Il'inskii, AV
    PHYSICS OF THE SOLID STATE, 2000, 42 (06) : 1126 - 1133
  • [18] On the nature of metal-semiconductor phase transition in vanadium dioxide
    E. B. Shadrin
    A. V. Il’inskii
    Physics of the Solid State, 2000, 42 : 1126 - 1133
  • [19] Hysteresis loop construction for the metal-semiconductor phase transition in vanadium dioxide films
    V. A. Klimov
    I. O. Timofeeva
    S. D. Khanin
    E. B. Shadrin
    A. V. Ilinskii
    F. Silva-Andrade
    Technical Physics, 2002, 47 : 1134 - 1139
  • [20] Hysteresis loop construction for the metal-semiconductor phase transition in vanadium dioxide films
    Klimov, VA
    Timofeeva, IO
    Khanin, SD
    Shadrin, EB
    Ilinskii, AV
    Silva-Andrade, F
    TECHNICAL PHYSICS, 2002, 47 (09) : 1134 - 1139
12345