Real-time observation of electron-beam induced mass transport in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates

被引：5

作者：

Ogawa, T ^{[1
]}

Akabori, M ^{[1
]}

Motohisa, J ^{[1
]}

Fukui, T ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Kita Ku, Sapporo, Hokkaido 0608628, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2B期

关键词：

strained InGaAs/AlGaAs layers; electron-beam irradiation; mass transport; surface deformation; quantum disk;

D O I：

10.1143/JJAP.38.1040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied surface deformation due to electron-beam irradiation in strained InGaAs/AlGaAs layers grown on GaAs (100) and (311)B planes in a horizontal low-pressure metalorganic vapor phase epitaxy system at about 800 degrees C. The surface deformation was observed in real time using a high-resolution scanning electron microscope at a magnification of 300,000. The surface deformation occurred from the inside of InGaAs/AlGaAs grown layer under the electron-beam irradiated area with the accelerating voltage of 30 kV and the scanning time ranging from 60 to 120 s. The surface deformation was not consist of amorphous-carbon contamination. The mass transport seems to be caused by the residual strain relaxation due to electron-beam irradiation.

引用

页码：1040 / 1043

页数：4