Real-time observation of electron-beam induced mass transport in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates

被引：5

作者：

Ogawa, T ^{[1
]}

Akabori, M ^{[1
]}

Motohisa, J ^{[1
]}

Fukui, T ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Kita Ku, Sapporo, Hokkaido 0608628, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2B期

关键词：

strained InGaAs/AlGaAs layers; electron-beam irradiation; mass transport; surface deformation; quantum disk;

D O I：

10.1143/JJAP.38.1040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied surface deformation due to electron-beam irradiation in strained InGaAs/AlGaAs layers grown on GaAs (100) and (311)B planes in a horizontal low-pressure metalorganic vapor phase epitaxy system at about 800 degrees C. The surface deformation was observed in real time using a high-resolution scanning electron microscope at a magnification of 300,000. The surface deformation occurred from the inside of InGaAs/AlGaAs grown layer under the electron-beam irradiated area with the accelerating voltage of 30 kV and the scanning time ranging from 60 to 120 s. The surface deformation was not consist of amorphous-carbon contamination. The mass transport seems to be caused by the residual strain relaxation due to electron-beam irradiation.

引用

页码：1040 / 1043

页数：4

共 21 条

[1] Real-time observation of electron-beam induced mass transport in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates
Ogawa, Tomoya
Akabori, Masashi
Motohisa, Junichi
Fukui, Takashi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (2 B): : 1040 - 1043
[2] Surface deformation phenomena induced by electron-beam irradiation in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates
Ogawa, T.
Akabori, M.
Motohisa, J.
Fukui, T.
Physica B: Condensed Matter, 1999, 270 (03): : 313 - 317
[3] Surface deformation phenomena induced by electron-beam irradiation in InGaAs/AlGaAs strained layers on GaAs (100) and (311)B substrates
Ogawa, T
Kawase, M
Akabori, M
Motohisa, J
Fukui, T
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 607 - 610
[4] Surface deformation phenomena induced by electron-beam irradiation in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates
Ogawa, T
Akabori, M
Motohisa, J
Fukui, T
PHYSICA B, 1999, 270 (3-4): : 313 - 317
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[8] Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates
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[9] Effect of growth interruption time and growth temperature on the natural formation of InGaAs/AlGaAs quantum disk structures on GaAs (311)B substrates
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