The Scattering of Hot Electrons by Phonons in AlGaN/GaN Quantum Dot

被引：0
|
作者：
Asgari, A. [1 ]
Babanejad, S. [1 ]
机构：
[1] Univ Tabriz, Photon Grp, Appl Phys Res Inst, Tabriz 51665163, Iran
来源：
INTERNATIONAL CONFERENCE ON THEORETICAL PHYSICS DUBNA-NANO 2010 | 2010年 / 248卷
关键词：
MICRODISK CAVITIES; WELLS; MODES;
D O I：
10.1088/1742-6596/248/1/012022
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A detailed study of the energy and momentum relaxation together with the determination of the dominant scattering mechanisms in the wide band gap III-N semiconductor materials are crucial for obtaining a comprehensive understanding of the carrier dynamics, especially at high operating electric fields. In this work we study a AlGaN/GaN quantum dots. The energy loss rate of quantum dot are calculated as a function of the external controllable parameters electrons density, quantum dot size and lattice temperature for the interaction of the charge carriers with bulk acoustic (deformation potential and piezoelectric scattering) and optical phonons.
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页数：7
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