Room-temperature 1.5-1.6 μm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature

被引：3

作者：

Tonkikh, AA ^{[1
]}

Tsyrlin, GE

Talalaev, VG

Novikov, BV

Egorov, VA

Polyakov, NK

Samsonenko, YB

Ustinov, VM

Zakharov, ND

Werner, P

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198063, Russia

[3] St Petersburg State Univ, St Petersburg 198504, Russia

[4] Max Planck Inst Microstruct Phys, D-06120 Halle Saale, Germany

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 12期

关键词：

D O I：

10.1134/1.1634662

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Heterostructures with In(Ga)As/GaAs quantum dots and quantum wells grown at low substrate temperature were studied by reflection high-energy electron diffraction, transmission electron microscopy, and photoluminescence methods. It is shown that InAs deposited onto (100) GaAs surface at low substrate temperature forms 2D clusters composed of separate quantum dots. Optical spectra of structures containing such clusters demonstrate emission in the 1.5-1.6 mum range. (C) 2003 MAIK "Nauka / Interperiodica".

引用

页码：1406 / 1410

页数：5

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