HIGH-POWER PULSED EVALUATION OF HIGH-VOLTAGE SiC N-GTO

被引：0

作者：

Ogunniyi, Aderinto ^{[1
]}

O'Brien, Heather ^{[1
]}

Ryu, Sei-Hyung ^{[2
]}

Richmond, Jim ^{[2
]}

机构：

[1] CCDC Army Res Lab, Adelphi, MD 20783 USA

[2] Wolfspeed, Durham, NC USA

来源：

2019 IEEE 7TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA 2019) | 2019年

关键词：

silicon carbide; gate turn-off thyristor; high voltage;

D O I：

10.1109/wipda46397.2019.8998904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This research is focused on the characterization and pulse evaluation of high voltage silicon carbide (SiC) n-type (n-doped drift region) gate turn-off thyristors (GTOs). The SiC GTO is a promising device that is currently being pursued by the Army as a replacement for current silicon-based, high-power pulse switches for power-dense, vehicle mounted pulsed power systems. The devices were are 15 kV, 1.0 cm(2) n-GTOs, fabricated by Wolfspeed, a Cree Company for the U.S. Combat Capabilities Development Command Army Research Laboratory. The SiC n-GTOs were pulsed at a 1-ms wide half-sine shaped current pulse to assess peak pulse current capability, on-state voltage drop, high action (1(2)t) capability, and peak power dissipation limitations.

引用

页码：425 / 429

页数：5

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