A broadband 42-63-GHz amplifier using 0.13-μm CMOS technology

被引：0

作者：

Wang, To-Po ^{[1
]}

Wang, Huei ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Commun, Taipei 10764, Taiwan

来源：

2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | 2007年

关键词：

CMOS; co-planar waveguides (CPW); low noise amplifier (LNA); millimeter-wave (MMW); thin-film microstrip (TFMS);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An amplifier using 0.13-mu m standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this paper. This four-stage cascode thin-film microstrip amplifier achieves the peak gains of 18.1 dB at 45 GHz and 17.8 dB at 60 GHz. The 3-dB frequency bandwidth ranges from 42 to 63 GHz and the minimum noise figure is 8.2 dB at 60 GM. The amplifier demonstrates the widest bandwidth with competitive gain among recently published millimeter-wave (MMW) CMOS amplifiers.

引用

页码：1771 / 1774

页数：4

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