High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum-well diode lasers emitting at 2μm

被引：5

作者：

Menna, RJ ^{[1
]}

Garbuzov, DZ ^{[1
]}

Lee, H ^{[1
]}

Martinelli, RU ^{[1
]}

Narayan, SY ^{[1
]}

Connolly, JC ^{[1
]}

机构：

[1] Sarnoff Corp, Princeton, NJ 08543 USA

来源：

IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II | 1998年 / 3284卷

关键词：

semiconductor diode lasers; 2 mu m wavelength; broadened-waveguide lasers; high-power; InGaAsSb; AlGaAsSb;

D O I：

10.1117/12.304450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review our recent progress in the design and operation of 2-mu m InGaAsSb/AlGaAsSb quantum-well diode lasers. The devices have InGaAsSb quantum-well active regions and AlGaAsSb cladding layers, and all were grown lattice-matched to GaSb substrates using molecular-beam epitaxy. The broadened-waveguide (BW) design produces internal losses as low as 2 cm(-1), which leads to external quantum efficiencies as high as 53%. Single-quantum-well lasers with 200-mu m apertures and 2-mm-long cavities exhibit output powers of 1.9 W CW and 4 W quasi-CW. The lowest threshold current densities are 115 A/cm(2). Small arrays of similar multi-quantum-well diodes emit 10.6 W CW. The broadened-waveguide design should improve the performance of all mid-infrared diode lasers.

引用

页码：238 / 246

页数：9

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