High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum-well diode lasers emitting at 2μm

被引：5
|
作者：
Menna, RJ [1 ]
Garbuzov, DZ [1 ]
Lee, H [1 ]
Martinelli, RU [1 ]
Narayan, SY [1 ]
Connolly, JC [1 ]
机构：
[1] Sarnoff Corp, Princeton, NJ 08543 USA
来源：
IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II | 1998年 / 3284卷
关键词：
semiconductor diode lasers; 2 mu m wavelength; broadened-waveguide lasers; high-power; InGaAsSb; AlGaAsSb;
D O I：
10.1117/12.304450
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We review our recent progress in the design and operation of 2-mu m InGaAsSb/AlGaAsSb quantum-well diode lasers. The devices have InGaAsSb quantum-well active regions and AlGaAsSb cladding layers, and all were grown lattice-matched to GaSb substrates using molecular-beam epitaxy. The broadened-waveguide (BW) design produces internal losses as low as 2 cm(-1), which leads to external quantum efficiencies as high as 53%. Single-quantum-well lasers with 200-mu m apertures and 2-mm-long cavities exhibit output powers of 1.9 W CW and 4 W quasi-CW. The lowest threshold current densities are 115 A/cm(2). Small arrays of similar multi-quantum-well diodes emit 10.6 W CW. The broadened-waveguide design should improve the performance of all mid-infrared diode lasers.
引用
收藏
页码：238 / 246
页数：9
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