Optimizing the dielectric constant and dissipation factor of PVA/n-Si Schottky diode

In this article, we map the dielectric properties of manufactured metal-polymer-semiconductor (MPS) Schottky barrier diode consisting of aluminum (Al), polyvinyl alcohol (PVA), and n-type silicon (n-Si), under different conditions of applied frequency (1 Hz-20 MHz), voltage (-2-2 volts), and temperature (-50-90 degrees C). By tuning all these parameters, we could activate all possible polarization modes at the PVA/Si interface and reach tremendous values for the dielectric constant of our sample (epsilon ' 3000) with a conveniently low dissipation factor (tan delta< 2) at operating frequencies of 0.2 MHz-0.2 kHz, voltage=2 volts, and temperature >= 30 <degrees>C. These promising values are motivating for using Al/PVA/n-Si Scottky diode structure in innovative energy storage applications.