Valley and spin polarization from graphene line defect scattering

被引:13
|
作者
Gunlycke, Daniel [1 ]
White, Carter T. [1 ]
机构
[1] USN, Res Lab, Washington, DC 20375 USA
来源
关键词
ELECTRONIC TRANSPORT;
D O I
10.1116/1.4706892
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Quantum transport calculations describing electron scattering off an extended line defect in graphene are presented. The calculations include potentials from local magnetic moments recently predicted to exist on sites adjacent to the line defect. The transmission probability is derived and expressed as a function of valley, spin, and angle of incidence of an electron at the Fermi level being scattered. It is shown that the previously predicted valley polarization in a beam of transmitted electrons is not significantly influenced by the presence of the magnetic moments. These moments, however, do introduce some spin polarization, in addition to the valley polarization, albeit no more than about 20%. [http://dx.doi.org/10.1116/1.4706892]
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页数:5
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