Thermal stresses and cracking behavior during laser crystallization of silicon on glass for thin film solar cells

被引：13

作者：

Pliewischkies, Torsten ^{[1
]}

Schmidt, Thomas ^{[1
]}

Hoeger, Ingmar ^{[1
]}

Bergmann, Joachim ^{[1
]}

Gawlik, Annett ^{[1
]}

Andrae, Gudrun ^{[1
]}

Falk, Fritz ^{[1
]}

机构：

[1] Leibniz Inst Photon Technol, D-07745 Jena, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 02期

关键词：

laser crystallization; silicon; thermal stress; thin film solar cells; AMORPHOUS-SILICON; TEMPERATURES; RELAXATION; SI;

D O I：

10.1002/pssa.201431465

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

During the preparation of silicon thin film solar cells on glass substrates by diode laser induced liquid phase crystallization (LPC), cracking is an issue. This is due to thermal stresses caused by high temperature gradients within the sample. In this paper, the relation between thermal stress and the temperature distribution within the sample during LPC is discussed. Experiments for two sets of laser irradiation parameters were done leading to crack free or cracked crystallization of the film. Additionally, the evolution of temperature during LPC was modeled numerically. Based on the simulation, the thermal stresses introduced were calculated. The complex viscoelastic problem was simplified to an elastic multilayer model, which can be solved analytically. The theoretical results can explain the experimental behavior.

引用

页码：317 / 322

页数：6

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