MgTiO3;
P-V-L bond theory;
Microwave characteristics;
Crystal structure;
L BOND THEORY;
DIELECTRIC-PROPERTIES;
CRYSTAL-STRUCTURE;
STRUCTURAL EVOLUTION;
LATTICE ENERGY;
RAMAN-SPECTRA;
CHEMICAL-BOND;
SPECTROSCOPY;
IONICITY;
D O I:
10.1016/j.ceramint.2021.04.148
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
In this article, the (Mn1/2W1/2)4+ complex cation co-doped ilmenite MgTiO3 ceramics with improved microwave characteristics were synthesized. The correlations between the crystal structural evolution induced by ionic substitution and the microwave characteristics were investigated using the structural analysis and the P-V-L bond theory. Theoretically, the Mg-O bond should have a larger value of covalency than Ti-O bond, attributing to the distribution of densities of states, where the s and p states of the Mg atom overlap with those of the O atom. This conclusion fits well the bond theory estimation. The dielectric constant is dominated predominantly by the average bond covalency, which is intrinsically caused by the increase of doping contents. Moreover, the structural stability declines slightly with the increase of (Mn1/2W1/2) contents. From the perspective of structural evolution, this dielectric performance is also reflected by the variations of the Raman shift and the FWHM value of Ag5 mode. The actual Q x f value, however, experiences a great enhancement at x = 0.010, which benefits generally from the uniformity of the grain size and the inhibition of reduction of Ti4+ valence. The excellent microwave characteristics of MgTi0.99(Mn1/2W1/2)0.01O3 ceramics were achieved: a epsilon r of 18.74, a Q x f value of 160992 GHz and a tau f of -58.2 ppm/degrees C, when sintered at 1325 degrees C.
机构:
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
Wu, Xiaohui
Zhang, Qin
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
Zhang, Qin
Huang, Fangyi
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
Huang, Fangyi
Huo, Xingyu
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
Huo, Xingyu
Li, Fuyu
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
Li, Fuyu
Jing, Yulan
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
Jing, Yulan
Li, Yuanxun
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机构:
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
Jiangxi Guo Chuang Ind Pk Dev Co Ltd, Ganzhou 341000, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
Li, Yuanxun
Su, Hua
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机构:
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
Jiangxi Guo Chuang Ind Pk Dev Co Ltd, Ganzhou 341000, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China