Large band-gap bowing in Cu1-xAgxGaS2 chalcopyrite semiconductors and its effect on optical parameters

被引:4
|
作者
Mitra, Chandrima [1 ]
Lambrecht, Walter R. L. [1 ]
机构
[1] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
关键词
D O I
10.1103/PhysRevB.76.035207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The band-gap bowing in the Cu1-xAgxGaS2 chalcopyrite alloy is studied using the full-potential linearized muffin-tin orbital method combined with various structural models, including so-called special quasirandom structures. The calculations confirm a large band-gap bowing (similar to 0.7 eV) in agreement with recent experimental results. It is found that the large bowing in part arises from a nonlinear behavior of the c/a ratio with concentration. Layered structures are found to have similar bowing to special quasirandom structures. The nonlinear band-gap behavior also leads to a nonlinear behavior of the index of refraction and the second-order nonlinear optical susceptibility with concentration. The maximum chi((2)) is found for a 50% alloy and is calculated to be about 27 pm/V.
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页数:7
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