Confined and interface polar optical phonon-limited electron mobility in quantum wires

被引:3
|
作者
Vartanian, AL [1 ]
机构
[1] Yerevan State Univ, Dept Solid State Phys, Yerevan 375025, Armenia
来源
关键词
D O I
10.1002/pssb.200440034
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electron mobility conditioned by confined and interface polar optical phonons for a quasi-one-dimensional cylindrical quantum wire embedded in a dielectric medium is investigated analytically. It is shown that the inclusion of the polar optical phonon confinement effects is crucial for accurate calculation of the low-field electron mobility in the quantum wire. Taking into account the inelasticity of the electron-polar optical phonon interaction, the electron mobility is derived by a method that was successfully applied in three- and quasi-two-dimensional cases. The contribution of intersubband transitions to electron mobility for the GaAs quantum wire embedded in the AlxGa1-xAs medium is estimated. The extremums of the mobility dependences on wire radius and Al concentration are obtained.
引用
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页码:1482 / 1490
页数:9
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