Confined and interface polar optical phonon-limited electron mobility in quantum wires

The electron mobility conditioned by confined and interface polar optical phonons for a quasi-one-dimensional cylindrical quantum wire embedded in a dielectric medium is investigated analytically. It is shown that the inclusion of the polar optical phonon confinement effects is crucial for accurate calculation of the low-field electron mobility in the quantum wire. Taking into account the inelasticity of the electron-polar optical phonon interaction, the electron mobility is derived by a method that was successfully applied in three- and quasi-two-dimensional cases. The contribution of intersubband transitions to electron mobility for the GaAs quantum wire embedded in the AlxGa1-xAs medium is estimated. The extremums of the mobility dependences on wire radius and Al concentration are obtained.