Electron beam lithography and ion implantation techniques for fabrication of high-T-c Josephson junctions

被引：6
|
作者：
Barth, R
Hamidi, AH
Hadam, B
Hollkott, J
Dunkmann, D
Auge, J
Kurz, H
机构：
[1] Inst. für Halbleitertechnik II, Rheinisch-Westfalische TH Aachen, D-52074 Aachen
来源：
MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(95)00274-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Established semiconductor process technologies are demonstrated to be suitable for the fabrication of high temperature superconductor (HTS) Josephson junctions. Single YBCO bridges were modified by local oxygen ion irradiation through a narrow slit in a PMMA mask which was formed by electron beam lithography. The influence of slit dimension and irradiation dose was investigated. The critical current and normal resistance of the modified microbridges can be controled by these two parameters. Proximity coupling across the modified region is observed up to a slit width of 250 nm. When exposed to microwave irradiation the microbridges exhibited Shapiro steps. In dc SQUIDs a voltage modulation as a function of an applied magnetic flux is observed.
引用
收藏
页码：407 / 410
页数：4
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