A Ka-Band Doherty-Like LMBA for High-Speed Wireless Communication in 28-nm CMOS

被引:29
|
作者
Qunaj, Valdrin [1 ]
Reynaert, Patrick [1 ]
机构
[1] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium
关键词
CMOS; Doherty; fifth generation (5G); load modulated balanced amplifier (LMBA); millimeter-wave (mm-wave); multi-Gb/s; peak-to-average power ratio (PAPR); power amplifier (PA); power back-off (PBO); MODULATED BALANCED AMPLIFIER; POWER-AMPLIFIER; TRANSMITTER; EFFICIENCY; SILICON; DESIGN;
D O I
10.1109/JSSC.2021.3110168
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents a millimeter-wave (mm-wave) Doherty-like load modulated balanced amplifier (LMBA) for high-speed wireless communication in a 28-nm bulk CMOS process. The presented architecture is based on a load modulation technique that injects an auxiliary signal into the isolation port a 90 degrees power-combining hybrid coupler at the output stage. The injected signal thereby modulates the load impedance at the balanced ports that is seen by the two main power amplifiers (PAs). In contrast to a Doherty PA, both impedances are modulated in the same manner, either upward or downward, both resistively and reactively, without the need for a bandwidth limiting impedance inverter. Furthermore, there is no need for complex Doherty output matching structures, and hence, a low-loss hybrid can be used to modulate the load impedance. The auxiliary signal is generated using a Class-C auxiliary amplifier, producing an overall Doherty-like response. The presented architecture, which uses a single RF input and requires no additional baseband input signal or control signals, is able to achieve multi-Gb/s data rates up to 18 Gb/s. From the continuous-wave measurements, the amplifier demonstrates the power back-off (PBO) efficiency enhancement. At 36 GHz, the PA achieves a measured maximum power added efficiency (PAE) of 32% with 22.6-dBm saturated output power (P-sat) and 30.5% PAE at a 19.6-dBm output referred 1-dB compression point (OP1dB). At 6-dB PBO from P-sat, the PA achieves a PAE of 24.2%. Modulated signal measurements were carried out using a single-carrier 64-quadrature amplitude modulation (QAM) signal at the center frequency of 36 GHz without digital pre-distortion (DPD). For a 64 QAM signal with a baud rate of 2 GSym/s (12 Gb/s), the PA achieves an average output power (P-avg) of 16 dBm with a PAE(avg) of 22% with an EVMrms of -25 dB. Similar measurements were done using a 3 GSym/s signal, giving a data rate of 18 Gb/s, where the PA achieves a P-avg of 15.5 dBm and PAE avg of 20% with an EVMrms of -25.1 dB.
引用
收藏
页码:3694 / 3703
页数:10
相关论文
共 50 条
  • [1] A Ka-Band CMOS Voltage Controlled Oscillator for High Speed Wireless Communication
    Huang, Zhe-Yang
    WORLD CONGRESS ON ENGINEERING AND COMPUTER SCIENCE, VOLS 1 AND 2, 2010, : 844 - 846
  • [2] Ka-band high-speed pulsed modulator
    Wang, Ling
    Tang, Xiao-Hong
    Wu, Tao
    Xiao, Fei
    CONFERENCE DIGEST OF THE 2006 JOINT 31ST INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 14TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, 2006, : 224 - 224
  • [3] A high gain CMOS LNA for Ka-Band Communication System
    Liao, Shengjia
    Jiang, Zhengdong
    Yu, Yiming
    Zhao, Chenxi
    Tang, Hongyan
    Liu, Huihua
    Wu, Yunqiu
    Kang, Kai
    2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019), 2019,
  • [4] A High-Speed Low-Power Flash ADC with Continued Pipelined Gating in 28-nm CMOS
    Gao, Yu Miao
    Qiu, Lei
    Guo, Xin Yu
    Tong, Mei Song
    2020 IEEE MTT-S INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC AND MULTIPHYSICS MODELING AND OPTIMIZATION (NEMO 2020), 2020,
  • [5] A High-Speed DSP Engine for First-Order Hold Digital Phase Modulation in 28-nm CMOS
    Roverato, Enrico
    Kosunen, Marko
    Lemberg, Jerry
    Martelius, Mikko
    Stadius, Kari
    Anttila, Lauri
    Valkama, Mikko
    Ryynanen, Jussi
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2018, 65 (12) : 1959 - 1963
  • [6] A High-Speed Programmable Frequency Divider for a Ka-Band Phase Locked Loop-Type Frequency Synthesizer in 90-nm CMOS
    Tang, Lu
    Chen, Kuidong
    Zhang, Youming
    Tang, Xusheng
    Zhang, Changchun
    ELECTRONICS, 2021, 10 (20)
  • [7] High-speed Linear GaN Technology with a record Efficiency in Ka-band
    Moon, Jeong-Sun
    Wong, Joel
    Grabar, Bob
    Antcliffe, Mike
    Chen, Peter
    Arkun, Erdem
    Khalaf, Issac
    Corrion, Andrea
    2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019), 2019, : 57 - 59
  • [8] Monolithic ESD Protection for Distributed High Speed Applications in 28-nm CMOS Technology
    Salcedo, Javier A.
    Parthasarathy, Srivatsan
    Hajjar, Jean-Jacques
    2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
  • [9] A Ka-Band Bi-Directional Reconfigurable Switched Beam-Forming Network Based on 4 x 4 Butler Matrix in 28-nm CMOS
    Lee, Youngjoo
    Suh, Bosung
    Min, Byung-Wook
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2023, 71 (06) : 2479 - 2487
  • [10] A full D-band CMOS envelope detector for high-speed OOK wireless communication
    Suh, Bohee
    Jeon, Sanggeun
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2018, 60 (07) : 1619 - 1622