Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxides

被引：1

作者：

Munteanu, D ^{[1
]}

Autran, JL ^{[1
]}

Decarre, E ^{[1
]}

Dinescu, R ^{[1
]}

机构：

[1] IRPHE, Lab Mat & Microelect Provence, F-13384 Marseille 13, France

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2003年 / 322卷 / 1-3期

关键词：

D O I：

10.1016/S0022-3093(03)00203-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new 2-D simulation code resolving the Schrodinger and Poisson equations coupled with the ballistic transport equation in double-gate (DG) devices has been developed. The present approach also includes the quantum mechanical tunneling of carriers through the source-to-drain barrier and the wave-function penetration in the gate oxide. This code has been used to investigate the operation of DG metal-oxide-semiconductor field-effect transistors (MOSFETs) in the deca-nanometer range (5-20 nm) with ultra-thin gate oxide and film bodies (1.5 nm). The present study highlights the impact of quantum tunneling on the DG MOSFET scaling by particularly analyzing several critical performance indicators such as short-channel effects, off-state current and subthreshold slope. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：206 / 212

页数：7

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