Migration Pinning and Roughening Transition of a Ni Grain Boundary
被引:1
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作者:
Lee, Sung Bo
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Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
Seoul Natl Univ, RIAM, Seoul 08826, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
Lee, Sung Bo
[1
,2
]
Jung, Jinwook
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机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
Seoul Natl Univ, RIAM, Seoul 08826, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
Jung, Jinwook
[1
,2
]
Yoo, Seung Jo
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机构:
Korea Basic Sci Inst, Electron Microscopy Res Ctr, Daejeon 34133, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
Yoo, Seung Jo
[3
]
Han, Heung Nam
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机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
Seoul Natl Univ, RIAM, Seoul 08826, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
Han, Heung Nam
[1
,2
]
机构:
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[2] Seoul Natl Univ, RIAM, Seoul 08826, South Korea
[3] Korea Basic Sci Inst, Electron Microscopy Res Ctr, Daejeon 34133, South Korea
来源:
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
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2020年
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51卷
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03期
To date, much research has been conducted into the effect of migration pinning on the grain size in polycrystalline materials. However, effects of migration pinning on the grain-boundary structure and its transition have not been illuminated. Here, using transmission electron microscopy (TEM) we have explored the pinning effects for the grain boundary in a Ni bicrystal. During TEM specimen preparation, a hole was intentionally drilled in the middle of the grain boundary as a pinning point against grain-boundary migration. The specimen was heated to 600 degrees C. The grain boundary is driven to migrate by both the surface energy anisotropy and the total strain energy reduction. Grain-boundary facets with a plane orientation of {0 3 2}//{1 1 1} appear near the hole. The facets undergo a structural transition from atomically flat to rough with increasing distance from the hole. A pinning force exerted by the hole suppresses the migration of the grain boundary near the hole, indicating that the grain-boundary region away from the hole is subjected to a higher driving force. It certainly appears that the phenomenon originates from a change in driving force with the distance from the hole, being a signature of kinetic roughening.
机构:
Soochow Univ, Shagang Sch Iron & Steel, 8 Ji Xue Rd, Suzhou 215137, Peoples R ChinaSoochow Univ, Shagang Sch Iron & Steel, 8 Ji Xue Rd, Suzhou 215137, Peoples R China
Li, Runjie
Zhou, Jian
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Soochow Univ, Shagang Sch Iron & Steel, 8 Ji Xue Rd, Suzhou 215137, Peoples R ChinaSoochow Univ, Shagang Sch Iron & Steel, 8 Ji Xue Rd, Suzhou 215137, Peoples R China
Zhou, Jian
Li, Yi
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Soochow Univ, Shagang Sch Iron & Steel, 8 Ji Xue Rd, Suzhou 215137, Peoples R ChinaSoochow Univ, Shagang Sch Iron & Steel, 8 Ji Xue Rd, Suzhou 215137, Peoples R China
Li, Yi
Liu, Yihan
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Soochow Univ, Shagang Sch Iron & Steel, 8 Ji Xue Rd, Suzhou 215137, Peoples R ChinaSoochow Univ, Shagang Sch Iron & Steel, 8 Ji Xue Rd, Suzhou 215137, Peoples R China
Liu, Yihan
Zhao, Bingbing
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Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, 800 Dong Chuan Rd, Shanghai 200240, Peoples R China
Shanghai Jiao Tong Univ, Mat Genome Initiat Ctr, 800 Dong Chuan Rd, Shanghai 200240, Peoples R ChinaSoochow Univ, Shagang Sch Iron & Steel, 8 Ji Xue Rd, Suzhou 215137, Peoples R China
Zhao, Bingbing
Ren, Fuzeng
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Southern Univ Sci & Thchnol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R ChinaSoochow Univ, Shagang Sch Iron & Steel, 8 Ji Xue Rd, Suzhou 215137, Peoples R China
机构:
Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Liao, Maijia
Xiao, Xiao
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Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Xiao, Xiao
Chui, Siu Tat
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Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USAHong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Chui, Siu Tat
Han, Yilong
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Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
机构:
Elect & Telecommun Res Inst, Basic Res Lab, Wireless Commun Devices Dept, Taejon 305350, South KoreaElect & Telecommun Res Inst, Basic Res Lab, Wireless Commun Devices Dept, Taejon 305350, South Korea
Park, CW
Yoon, DY
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机构:Elect & Telecommun Res Inst, Basic Res Lab, Wireless Commun Devices Dept, Taejon 305350, South Korea
Yoon, DY
Blendell, JE
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机构:Elect & Telecommun Res Inst, Basic Res Lab, Wireless Commun Devices Dept, Taejon 305350, South Korea
Blendell, JE
Handwerker, CA
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机构:Elect & Telecommun Res Inst, Basic Res Lab, Wireless Commun Devices Dept, Taejon 305350, South Korea