A 19.6-39.4 GHz Broadband Low Noise Amplifier Based on Triple-Coupled Technique and T-Coil Network in 65-nm CMOS

被引：1
|
作者：
Wan, Jiayue [1 ]
Li, Xiao [2 ]
Han, Fang [1 ]
Qi, Quanwen [3 ]
Liu, Xuzhi [1 ]
Chen, Zhiming [1 ]
机构：
[1] Beijing Inst Technol, Beijing 100081, Peoples R China
[2] China Elect Technol Grp Corp, Informat Sci Acad, Beijing 100086, Peoples R China
[3] Beijing Inst Technol, Chongqing Ctr Microelect & Microsyst, Chongqing 401332, Peoples R China
来源：
ELECTRONICS | 2022年 / 11卷 / 12期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
5G millimeter-wave communication; broadband; low noise amplifier; CMOS; magnetically coupled resonators; triple-coupled technique; T-coil network; POWER-AMPLIFIER; PAE;
D O I：
10.3390/electronics11121833
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a differential 19.6-39.4 GHz broadband low-noise amplifier (LNA) in 65-nm CMOS technology. The LNA consists of two cascode stage and one common-source stage. To achieve a wide bandwidth and low average noise figure, inter-stage peak-gain distribution technique and transformer-based triple-coupled technique are developed. Besides, a new compact T-coil-based network is proposed to neutralize the parasitic capacitors and enlarge the gain. The measure results show that the 3-dB bandwidth is from 19.6 to 39.4 GHz, the maximum gain is 23.5 dB, and the noise figure (NF) is from 3.7 to 5.8 dB. The dc power comsumption is 46 mW with 1V supply voltage. The input P1dB is -17 dBm at 30 GHz.
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收藏
页数：9
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