Ge dots embedded in silicon dioxide using sol-gel deposition

被引：0
|
作者：
Stoica, T. F.
Gartner, M.
Teodorescu, V. S.
Stoica, T.
机构：
[1] Natl Inst Mat Phys, Bucharest 76900, Magurele, Romania
[2] Romanian Acad Sci, Inst Phys Chem, Bucharest 77208, Romania
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2007年 / 9卷 / 10期
关键词：
silicon dioxide; Ge dots; sol-gel deposition;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A versatile method, that of sol-gel deposition was used to produce Si1-xGexO2 films on Si substrates. Samples after annealing at different temperatures are investigated by different techniques including high-resolution transmission electron microscopy and spectral ellipsometry. It was revealed that, by annealing at high temperatures, Ge accumulates in small clusters (5-10nm) inside of the oxide layer. By ellipsometric investigations, valuable data about the temperature evolution of the composition and optical constants were obtained.
引用
收藏
页码：3271 / 3274
页数：4
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