The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)

被引：9
|
作者：
Xu, Jianli [1 ,2 ]
Wu, Lin [1 ,2 ]
Li, Yufan [1 ,2 ]
Tian, Dai [1 ,2 ]
Zhu, Kai [1 ,2 ]
Gong, Xinxin [1 ,2 ]
Jin, Xiaofeng [1 ,2 ]
机构：
[1] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
来源：
SCIENCE BULLETIN | 2015年 / 60卷 / 14期
基金：
中国国家自然科学基金;
关键词：
Anomalous Hall effect; Fe; Skew scattering; Side jump; Intrinsic anomalous Hall effect; SIDE-JUMP MECHANISM; SCATTERING;
D O I：
10.1007/s11434-015-0831-y
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 Omega(-1) cm(-1) is determined experimentally for the first time. Together with 821 Omega(-1) cm(-1) in Fe(111) and 1100 Omega(-1) cm(-1) in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe.
引用
收藏
页码：1261 / 1265
页数：5
相关论文
共 50 条
  • [21] Absence of weak electron localization in epitaxial Fe wires on GaAs(110)
    Hassel, C.
    Roemer, F. M.
    Dumpich, G.
    Lindner, J.
    PHYSICAL REVIEW B, 2009, 79 (09):
  • [22] EPITAXIAL-GROWTH OF IRON IODIDE FILMS ON FE(110)
    MUELLER, DR
    RHODIN, TN
    DOWBEN, PA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1518 - 1521
  • [23] X-ray diffraction and ferromagnetic resonance study of sputtered (110) GaAs/Fe epitaxial films
    Ding, YF
    Alexander, C
    Klemmer, TJ
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 6674 - 6676
  • [24] In situ oxidation of epitaxial Fe(110) films grown on Mo(110)/Al2O3(11-20) substrates
    Fonin, M
    Dedkov, YS
    Rüdiger, U
    Güntherodt, G
    SURFACE SCIENCE, 2003, 536 (1-3) : 61 - 66
  • [25] Magnetic domain structure of epitaxial Gd films grown on W(110)
    Hartl, Patrick
    Leisegang, Markus
    Bode, Matthias
    PHYSICAL REVIEW B, 2022, 105 (17)
  • [26] Anomalous Hall effect in epitaxial permalloy thin films
    Zhang, Y. Q.
    Sun, N. Y.
    Shan, R.
    Zhang, J. W.
    Zhou, S. M.
    Shi, Z.
    Guo, G. Y.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (16)
  • [27] Nonlinear spin Hall effect in GaAs (110) quantum wells
    Ivanov, V. I.
    Dugaev, V. K.
    Sherman, E. Ya.
    Barnas, J.
    PHYSICAL REVIEW B, 2011, 84 (08)
  • [28] Spin-Hall effect in a [110] GaAs quantum well
    Hankiewicz, E. M.
    Vignale, G.
    Flatte, M. E.
    PHYSICAL REVIEW LETTERS, 2006, 97 (26)
  • [29] Surface preparation effect of GaAs(110) substrates on the ZnSe epitaxial layer grown by molecular beam epitaxy
    Kyoto Univ. Venture Bus. Laboratory, Kyoto 606-8501, Japan
    不详
    不详
    不详
    Appl Phys A, 6 (627-629):
  • [30] Surface preparation effect of GaAs(110) substrates on the ZnSe epitaxial layer grown by molecular beam epitaxy
    Ko, HC
    Kim, YS
    Kim, CO
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 68 (06): : 627 - 629
12345