Structural and electrical properties of hydrogen-doped In2O3 films fabricated by solid-phase crystallization

被引：42
|
作者：
Koida, T. [1 ]
Fujiwara, H. [1 ]
Kondo, M. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 19-25期
关键词：
ceramics; crystal growth; X-ray diffraction; conductivity; sputtering; indium tin oxide and other transparent conductors;
D O I：
10.1016/j.jnoncrysol.2007.09.076
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated structural and electrical properties of hydrogen (H)-doped In2O3 films fabricated by crystallization of the amorphous phase. To fabricate H-doped amorphous films, H2O vapor has been introduced into a sputtering system during the deposition of In2O3 without substrate heating. The films fabricated by solid-phase crystallization at 200 C have larger grains and lower strain than films fabricated by vapor-phase crystal growth. The resulting H-doped In2O3 films show very large mobility of 130 cm(2)/V s with resistivity of 2.7 x 10(-4) Omega cm. The high mobility in the films is ascribable to suppression of grain boundary defects as well as multicharged and neutral impurities. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：2805 / 2808
页数：4
相关论文
共 50 条
  • [21] Structural, electrical and optical properties of In2O3:Mo filMS deposited by spray pyrolysis
    Seo, DJ
    Park, SH
    PHYSICA B-CONDENSED MATTER, 2005, 357 (3-4) : 420 - 427
  • [22] Structural and Electrical Properties of In2O3 Thin Films Prepared by Pulsed Laser Deposition
    Veeraswami, Y.
    Choudhary, R. J.
    Phase, D. M.
    Jana, Anupam
    Bhaskar, S. Uday
    Reddy, M. V. Ramana
    62ND DAE SOLID STATE PHYSICS SYMPOSIUM, 2018, 1942
  • [23] Structural, optical and magnetic properties of Cr doped In2O3 powders and thin films
    Krishna, N. Sai
    Kaleemulla, S.
    Amarendra, G.
    Rao, N. Madhusudhana
    Krishnamoorthi, C.
    Omkaram, I.
    Reddy, D. Sreekantha
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (11) : 8635 - 8643
  • [24] Effect of Annealing on Structural and Optical Properties of Cu Doped In2O3 Thin Films
    Kaleemulla, S. '
    Rao, N. Madhusudhana
    Krishna, N. Sai
    Kuppan, M.
    Begam, M. Rigana
    Shobana, M.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2013, 5 (04)
  • [25] Using hydrogen-doped In2O3 films as a transparent back contact in (Ag,Cu)(In,Ga)Se2 solar cells
    Keller, Jan
    Nilsson, Nina Shariati
    Aijaz, Asim
    Riekehr, Lars
    Kubart, Tomas
    Edoff, Marika
    Torndahl, Tobias
    PROGRESS IN PHOTOVOLTAICS, 2018, 26 (03): : 159 - 170
  • [26] Structural, optical and magnetic properties of Cr doped In2O3 powders and thin films
    N. Sai Krishna
    S. Kaleemulla
    G. Amarendra
    N. Madhusudhana Rao
    C. Krishnamoorthi
    I. Omkaram
    D. Sreekantha Reddy
    Journal of Materials Science: Materials in Electronics, 2015, 26 : 8635 - 8643
  • [27] Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors
    Kataoka, Taiki
    Magari, Yusaku
    Makino, Hisao
    Furuta, Mamoru
    MATERIALS, 2022, 15 (01)
  • [28] ELECTRICAL PROPERTIES OF IN2O3
    DEWIT, JHW
    JOURNAL OF SOLID STATE CHEMISTRY, 1973, 8 (02) : 142 - 149
  • [29] Effect of Heat Treatment on the Electrical Properties of Thin Yttrium-Doped In2O3 Films
    Kalinin, Yu. E.
    Zhilova, O. V.
    Babkina, I. V.
    Sitnikov, A. V.
    Makagonov, V. A.
    Remizova, O. I.
    INORGANIC MATERIALS, 2018, 54 (09) : 885 - 891
  • [30] ELECTRICAL PROPERTIES OF RF REACTIVE SPUTTERED Sn-DOPED In2O3 FILMS.
    Shinoki, Fujitoshi
    Yoshida, Sadafumi
    Ohhata, Yutaka
    Bulletin of the Electrotechnical Laboratory, Tokyo, 1980, 44 (1-2): : 115 - 120
12345